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AS5013
Datasheet - Electrical Characteristics
6 Electrical Characteristics
6.1 Operating Conditions
TAMB = -20癈 to +80癈, VDD = 3.3V, RESETn = HIGH
Table 3. Operating Conditions
Symbol
Parameter
Conditions
Min
Typ
Max
Units
VDD
Core supply voltage
2.7
3.6
V
VDDp
Peripheral supply voltage
Input: RESETn
Open drain outputs: SCL, SDA, INTn.
External I2C pull up resistor to be connected
to VDDp.
1.7
VDD
V
IDD
s
Maximal average current consumption
on VDD, Pulsed peaks = IDD
f
depends on the sampling time ts[ms]
TAMB = -20篊 to +50篊
3+3760/ts [ms]
TAMB = 50篊 to +80篊
10+3760/ts [ms]
IDD
I
Current consumption on core supply,
Idle mode, no readout (ts = infinite)
TAMB = -20篊 to +50篊
3
TAMB = 50篊 to +80篊
10
IDD
f
Current consumption on core supply,
Idle mode, continuous readout
(ts=450祍)
Continuous current pin VDD
Maximum sampling ts = 450祍
10
mA
Tpua
Power up time analog
Step on VDD to Data_Ready
1000
Tconv
Conversion time
Read X/Y coordinate I睠 Y_res_int ACK bit
of to Data_Ready
450
t
P,W
Nominal wakeup time
20
320
ms
dx
dy
Lateral movement radius
The range depends on the magnet and the
distance to the surface, dx?dy?<= 4mm
2
mm
d
Type of magnet
Cylindrical; axial magnetized
2
3
mm
RH
Hall array diameter
2.2
mm
B
Z
Magnetic field strength
Vertical magnetic field at magnet center;
measured at chip surface
30
120
mT
TAMB
Ambient temperature range
-20
+80
Resolution of XY displacement
Over 2*dx and 2*dy axis
8
bit
Noise (RMS)
C1..C5 channel data (result from two
measurement  positive and negative
current spinning)
100
PSSR
Power Supply Rejection Ratio
VDD=3.3V;
Temp = 25癈
dVDD= 100 mVpp at 10.30 kHz
0.2
%/
100mV
IC package
QFN16 4x4x0.55mm
Power supply filtering capacitors
Ceramic capacitor VDD - VSS
100
nF
Ceramic capacitor VDDp - VSS
100
nF
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